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| SMD Type HEXFET Power MOSFET KRF7530 IC IC Features Trench Technology Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile ( 1.1mm) Available in Tape & Reel Absolute Maximum Ratings Ta = 25 Parameter Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V,Ta = 25 Continuous Drain Current, VGS @ 4.5V,TA = 70 Pulsed Drain Current*1 Power Dissipation Ta = 25 Power Dissipation Ta = 70 Linear Derating Factor Single Pulse Avalanche Energy *2 Gate-to-Source Voltage Junction and Storage Temperature Range Junction-to-Ambient *1 1* Surface mounted on FR-4 board, t 10sec. EAS VGS TJ, TSTG R JA Symbol VDS ID ID IDM PD PD Rating 20 5.4 4.3 40 1.3 0.8 10 33 12 -55 to + 150 100 /W mW/ mJ V W A Unit A *2 Starting TJ = 25 , L = 2.6mH,RG = 25 , IAS = 5.0A. www.kexin.com.cn 1 SMD Type KRF7530 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge *1 Pulse width 400 s; duty cycle 2%. Body Diode) Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss IS ISM VSD trr Qrr TJ = 25 , IS = 1.3A, VGS = 0V*1 TJ = 25 , IF = 1.3A.VR=10V di/dt = 100A/ s*1 19 13 Symbol V(BR)DSS V(BR)DSS/ IC IC Testconditons VGS = 0V, ID = 250 A TJ ID = 1mA,Reference to 25 VGS = 4.5V, ID = 5.4A*1 VGS = 2.5V, ID =4.6A*1 Min 20 Typ Max Unit V 0.01 0.030 0.045 0.60 13 1.0 25 -100 100 18 3.4 3.4 8.5 11 36 16 1310 180 150 1.3 26 5.1 5.1 1.2 V/ RDS(on) VGS(th) gfs IDSS VDS = VGS, ID = 250 A VDS = 10V, ID = 5.4A*1 VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 70 V S A IGSS VGS = 12V VGS = -12V ID = 5.4A VDS = 16V VGS = 4.5V,*1 VDD =10V ID = 1.0A RG =6.0 RD = 10 VGS = 0V VDS = 15V f = 1.0MHz nA nC ns pF A Body Diode) *2 40 1.2 29 20 V ns nC *2 Repetitive rating; pulse width limited bymax 2 www.kexin.com.cn |
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